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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV946 UHF power transistor
Product specification Supersedes data of 1995 Jun 29 1997 Oct 30
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Internal input and output matching for easy matching, high gain and efficiency * Poly-silicon emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATIONS * Base stations in the 850 to 960 MHz frequency range. DESCRIPTION
handbook, halfpage
BLV946
PINNING - SOT273A PIN 1 2 3 4 5 6 emitter emitter collector base emitter emitter DESCRIPTION
2
4
6
NPN silicon planar transistor intended for common emitter class-AB operation. The transistor has internal input and output matching by means of MOS capacitors. The encapsulation is a SOT273A flange envelope with a ceramic cap. All leads are isolated from the flange.
1 Top view 3 5
MBK131
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 960 VCE (V) 26 PL (W) 40 Gp (dB) 9 C (%) 55
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Oct 30
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature range operating junction temperature up to Tmb = 25 C open base open collector CONDITIONS open emitter - - - - - - -65 - MIN.
BLV946
MAX. 70 30 3 6 6 90 +150 +200
UNIT V V V A A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 90 W; Tmb = 25 C VALUE 1.94 0.3 UNIT K/W K/W
handbook, halfpage
10
MLD231
handbook, halfpage
120
MLD232
IC (A) (1) (2)
Ptot (W) (2) 80
(1) 40
1
1
10
V CE (V)
10 2
0 0 40 80 120 Th ( o C) 160
(1) Tmb = 25 C. (2) Th = 70 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 30
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Notes 1. Measured under pulsed conditions: tp 500 s; 0.01. 2. CC value is that of the die only; it is not measurable because of internal matching network. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance CONDITIONS open emitter; IC = 30 mA open base; IC = 60 mA open collector; IE = 1.2 mA VBE = 0; VCE = 28 V VCE = 10 V; IC = 2 A; note 1 VCB = 26 V; IE = ie = 0; f = 1 MHz; note 2 MIN. 70 30 3 - 30 - - - - - - 33 TYP.
BLV946
MAX. - - - 3 120 -
UNIT V V V mA pF
MLD233
handbook, halfpage
100
h FE 80 (1) 60 (2) 40
20
0
0
1
2
3
4
5 I C (A)
6
Measured under pulsed conditions; tp 500 s; 0.01. (1) VCE = 26 V. (2) VCE = 10 V.
Fig.4
DC current gain as a function of collector current; typical values.
1997 Oct 30
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter, class-AB test circuit; Rth mb-h = 0.3 K/W. MODE OF OPERATION CW, class-AB f (MHz) 960 VCE (V) 26 ICQ (mA) 130 PL (W) 40 Gp (dB) 9 typ. 11
BLV946
C (%) 55 typ. 60
Ruggedness in class-AB operation The BLV946 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases at rated output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 130 mA; Th = 25 C; Rth mb-h = 0.3 K/W.
handbook, halfpage
16
MLD234
80 (%) 60 Gp
MLD235
handbook, halfpage
60
Gp (dB) 12
PL (W) 40
8
40
20 4 20
0 0 20 40 P L (W) 60
0
0 0 2 4 6 8 P i (W) 10
VCE = 26 V. ICQ = 130 mA. f = 960 MHz.
VCE = 26 V. ICQ = 130 mA. f = 960 MHz.
Fig.5
Power gain and efficiency as functions of load power; typical values.
Fig.6
Load power as a function of input power; typical values.
1997 Oct 30
5
Philips Semiconductors
Product specification
UHF power transistor
BLV946
handbook, full pagewidth
L6 Vbias C5 C6 C4 R1 C8
C7
C9
C12
L7 R2 VCC C15
C13
C14
L5
L8
C10
C11
input 50
,,,, ,,,,,,,,, ,,,, ,,,,,,,,, ,,,,,
L9 L1 L2 C3 L4 DUT L10 C16 L11 L12 C1 C2 C17 C18 L3
output 50
MLD236
Fig.7 Class-AB test circuit at 960 MHz.
List of components COMPONENT C1, C2, C17, C18 C3, C16 C4, C13 C5, C8, C10, C13, C15 C6 C7, C11 C9 C12 C14 L1 L2 L3, L9 L4, L10 DESCRIPTION TEKELEC variable capacitor type 6451 multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 VALUE 12 pF 68 pF, 500 V 10 F, 63 V 20 pF, 500 V 100 nF, 50 V 100 pF, 500 V 470 pF, 50 V 10 nF, 50 V 22 nF, 50 V 50 50 8 37 length 36 mm width 2.2 mm length 8 mm width 2.2 mm length 10 mm width 20 mm length 4.5 mm width 3.5 mm 2222 731 18471 2222 731 18103 2222 731 18223 2222 581 76641 2222 030 28109 DIMENSIONS CATALOGUE No.
1997 Oct 30
6
Philips Semiconductors
Product specification
UHF power transistor
BLV946
COMPONENT L5 L6, L7 L8 L11 L12 R1, R2 Notes
DESCRIPTION microchoke Ferroxcube wide band HF choke, grade 3B 4.5 turns enamelled 1 mm copper wire stripline; note 2 stripline; note 2 metal film resistor
VALUE 2.2 H
DIMENSIONS
CATALOGUE No. 4322 057 02281 4312 020 36642
50 nH 50 50 100 ; 0.4 W
internal dia. 4 mm close wound length 7 mm width 2.2 mm length 37 mm width 2.2 mm 2322 171 11001
1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE microfibre-glass dielectric (r = 2.2); thickness 132"; thickness of the copper sheet 2 x 35 m.
1997 Oct 30
7
Philips Semiconductors
Product specification
UHF power transistor
BLV946
handbook, full pagewidth
70
70
70
70
KV9004
KV9005
C6 V bias C4 C5 L6 R1 L1 C2 C1 L2 L4 C3 L10 C16 C8 C7 L5 L3 L9 C9 L8
C10 C12 C11
C14 C13
C15 VCC
L7 R2 L12
L11 C17
C18
MLD237
Dimensions in mm. The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Component layout and printed circuit board for 960 MHz class-AB test circuit. 1997 Oct 30 8
Philips Semiconductors
Product specification
UHF power transistor
BLV946
MLD238
MLD239
handbook, halfpage
10
handbook, halfpage
10
Zi () 5
xi ri
ZL () 5 RL
0
0
XL 5 5
10 840
880
920
960
1000 f (MHz)
10 840
880
920
960
1000 f (MHz)
VCE = 26 V; ICQ = 130 mA; PL = 40 W; Th = 25 C; Rth mb-h = 0.3 K/W.
VCE = 26 V; ICQ = 130 mA; PL = 40 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.9
Input impedance as a function of frequency (series components); typical values.
Fig.10 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
14
MLD240
Gp (dB) 12
10
handbook, halfpage
8
Zi ZL
MBA451
6 820
880
940
1000
1060 f (MHz)
VCE = 26 V; ICQ = 130 mA; PL = 40 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.11 Power gain as a function of frequency; typical values.
Fig.12 Definition of transistor impedance.
1997 Oct 30
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV946
SOT273A
D
A F
U1 q H1 b1 C w2 M C
B
c
5
3
1
H
U2
E
A
6
4
b e
2
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.45 7.27 0.286 0.254 b 2.42 1.80 b1 3.18 2.92 c 0.16 0.10 D E e 4.35 0.171 F 3.05 2.54 0.120 0.100 H 15.75 14.73 0.62 0.58 H1 10.93 10.66 0.43 0.42 p 3.31 3.04 0.130 0.120 Q 4.35 4.03 q 18.42 U1 24.90 24.63 0.98 0.97 U2 10.29 10.03 0.405 0.395 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
10.93 10.29 10.66 10.03
0.095 0.125 0.071 0.115
0.006 0.430 0.405 0.004 0.420 0.395
0.171 0.725 0.159
OUTLINE VERSION SOT273A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1997 Oct 30
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV946
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Oct 30
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/03/pp12
Date of release: 1997 Oct 30
Document order number:
9397 750 02986

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